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Publications by MARISE partners
1.“Optically in-situ monitored growth of carbon doped InAlAs by LP-MOVPE using CBr4”, J. Décobert, N. Lagay, B. Thevenard, Journal of Crystal Growth, Vol.310 (2008), pp 4813-4817.
2."A 2.7V 9.8Gb/s burst-mode transimpedance amplifier with fast automatic gain locking and coarse threshold extraction", T. De Ridder, P. Ossieur, B. Baekelandt, C. Mélange, J. Bauwelinck, C. Ford, X.Z. Qiu, J. Vandewege, in Proc. IEEE Solid-State Circuits Conference (ISSCC), San Francisco, 2008, pp. 220-221.
3."10 Gb/s burst-mode post amplifier with automatic reset", T. De Ridder, P. Ossieur, C. Melange, B. Baekelandt, J. Bauwelinck, X.Z. Qiu and J. Vandewege, IET Electronics Letters, Vol. 44, pp. 1371-1373, Nov. 2008.
4."InGaAsN based photodiodes", J. David, Plenary talk, 24th Regional Conference on Solid State Science and Technology, RCSSST’08, Port Dickson, Malaysia, 2008.
5.“InGaAs Communication Photodiodes: From Low to High Power Level Designs”, M. Achouche, Invited paper, SPIE Photonics West, January 25-29 (2009), San-Jose, US (Proc. Vol.7222 72221D-1 to 72221D-7).
6."A 10 Gb/s Burst-Mode Receiver with Automatic Reset Generation and Burst Detection for Extended Reach PONs", P. Ossieur, T. De Ridder, J. Bauwelinck, C. Mélange, B. Baekelandt, X. Z. Qiu, J. Vandewege, G. Talli, C. Antony, P. Townsend and C. Ford, Optical Fibre Communication Conference (OFC), San Diego, 2009, pp. OWH3.
7.“Research and development of wireline and wireless physical layer components and subsystem”, J. Bauwelinck, C. Mélange, X. Yin, B. Baekelandt, T. De Ridder, X. Z. Qiu, J. Vandewege, accepted by European workshop on photonic solutions for wireless, access, and in-house networks, Duisburg, May 2009.
8.“Bulk lattice-matched InGaAsN for optoelectronic devices”, J. David, Invited paper, Telekom Malaysia R&D Malaysia, May. 2009.
9.“180 GHz Gain-Bandwidth product back-side illuminated GaInAs-AlInAs APDs”, A. Rouvié, D. Carpentier, J. Décobert, N. Lagay, F. Pommereau, M. Achouche, IEEE Photonics Technology Letters, Vol. 21, N0. 11, 2009, pp. 712-714.
10."Very Low Dark Current AlInAs/GaInAs SAGM Avalanche Photodiodes for 10Gb/s applications", M. Lahrichi, E. Derouin, D. Carpentier, N. Lagay, J. Decobert, G. Glastre and M. Achouche, European Conference on Optical Communication (ECOC), Vienna, 2009, pp. 09.2.2.
11."Evolution of Burst Mode Receivers", X.Z. Qiu, C. Mélange, T. De Ridder, B. Baekelandt, J. Bauwelinck, X. Yin, and J. Vandewege, Invited paper, European Conference on Optical Communication (ECOC), Vienna, 2009, pp. 07.5.1.
12."Dark current mechanisms in InxGa1-xAs1-yNy", L. J. J. Tan, W. M. Soong, S. L. Tan, Y. L. Goh, M. J. Steer, J. S. Ng and J. P. R. David, IEEE Photonics society, Belek-Antalya, Turkey, 2009, pp.233-234.
13."InGaAs High Speed Communication Photodiodes", M. Achouche, G. Glastre, C. Caillaud, M. Lahrichi and D. Carpentier, IEEE Photonics society, Belek-Antalya, Turkey, 2009, pp.361-362.
14.“Effects of annealing on the background doping and photocurrent of MBE-grown bulk InGaAsN p-i-n photodiodes”, S. L. Tan, L. J. J. Tan, Y. L. Goh, S. Y. Zhang, J. S. Ng, J. P. R. David, I. P. Marko, J. Allam, S. J. Sweeney and A. R. Adams, Proceedings for 4th Annual Institute of Physics meeting on UK Compound Semiconductors, Sheffield, July 2009.
15.“Effect of incorporating Sb into InGaAsN material system”, L. J. J. Tan, S. L. Tan, Y. L. Goh, S. Zhang, J. S. Ng, J. P. R. David, I. P. Marko, J. Allam, S. J. Sweeney and A. R. Adams, Proceedings for 4th Annual Institute of Physics meeting on UK Compound Semiconductors, Sheffield, July 2009.
16.“Fully DC-Coupled 10Gb/s Burst-Mode PON Prototypes and Upstream Experiments with 58ns Overhead”, Cedric Mélange, Xin Yin, Bart Baekelandt, Tine De Ridder, Xing-Zhi Qiu, Johan Bauwelinck, Jan Gillis, Pieter Demuytere, and Jan Vandewege, Optical Fibre Communication Conference (OFC), San Diego, 2010, pp. OWX2.
17.“Reduction of dark current and unintentional background doping in InGaAsN photodetectors by ex situ annealing”, S. L. Tan, L. J. J. Tan, Y. L. Goh, S. Y. Zhang, J. S. Ng, J. P. R. David, I. P. Marko, J. Allam, S. J. Sweeney and A. R. Adams, Proceedings of SPIE Photonics Europe, Brussels, April 2010, Proc. Vol. 7726-59.
18.“InGaAsN absorber in APDs for 1.3mm wavelength applications”, J. S. Ng, S. L. Tan, Y. L. Goh, S. Zhang,, C. H. Tan, J. P. R. David, I. P. Marko, J. P. Allam, S. J. Sweeney and A. R. Adams, Proceedings for the 22nd International Conference on Indium Phosphide and Related Materials (IPRM), Takamatsu, Kagawa, May 2010.
19.“GaInNAs for photodiodes”, J. S. Ng, C. H. Tan, J. R. David, and A. R. Adams, (Invited) Proceedings for European Materials Research Society (EMRS) Spring Meeting, Strasbourg, June 2010.
20.“Dark current mechanism in bulk GaInNAs lattice matched to GaAs”, Lionel J. J. Tan, W. M. Soong, J. P. R. David, J. S. Ng, submitted for publication in the J. of Appl., Phys., 2010.
21.“Overview of lifetest means and procedures on optoelectronic devices”, L.S. HOW, G. Pedroza, S. Lhuillier, A. Delbergue & F. Rosala, Proceedings 2nd International Symposium on Reliability of Optoelectronics for Space (ISROS), April 28-30, 2010
22.AdvEOTec Newsletter announces new testing capabilities of avalanche photodiodes thanks to MARISE project. Link : www.adveotec.com/news/news1004.htm
23.“InGaAs Communication Photodiodes: From Low- to High-Power-Level Designs”, M. Achouche, G. Glastre, C. Caillaud, M. Lahrichi, M. Chtioui, and D. Carpentier, IEEE Photonics Journal, Vol. 2, N0. 3, 2010, pp. 460-468.
24.“240-GHz Gain-Bandwidth Product Back-Side Illuminated AlInAs Avalanche Photodiodes ”, M. Lahrichi, G. Glastre, E. Derouin, D. Carpentier, N. Lagay, J. Decobert and M. Achouche, accepted for publication in IEEE Photonics Technology Letters.
Patents:
25.“Circuit for end of burst detection”, Cedric Melange, Johan Bauwelinck, Xing-Zhi Qiu and Jan Vandewege, filed as EP 10157244, 22 March 2010.
“Device and Method for Signal Detection in a TDMA Network”, Johan Bauwelinck, Tine De Ridder, Cedric Mélange, Peter Ossieur, Bart Baekelandt, Xing-Zhi Qiu, Jan Vandewege, International published number WO 2009 065861 A2, 28 May 2009; and US Application Serial Number 12/680,011, Case No.: 07-1159-WO-US, March 25, 2010.
1.“Optically in-situ monitored growth of carbon doped InAlAs by LP-MOVPE using CBr4”, J. Décobert, N. Lagay, B. Thevenard, Journal of Crystal Growth, Vol.310 (2008), pp 4813-4817.
2."A 2.7V 9.8Gb/s burst-mode transimpedance amplifier with fast automatic gain locking and coarse threshold extraction", T. De Ridder, P. Ossieur, B. Baekelandt, C. Mélange, J. Bauwelinck, C. Ford, X.Z. Qiu, J. Vandewege, in Proc. IEEE Solid-State Circuits Conference (ISSCC), San Francisco, 2008, pp. 220-221.
3."10 Gb/s burst-mode post amplifier with automatic reset", T. De Ridder, P. Ossieur, C. Melange, B. Baekelandt, J. Bauwelinck, X.Z. Qiu and J. Vandewege, IET Electronics Letters, Vol. 44, pp. 1371-1373, Nov. 2008.
4."InGaAsN based photodiodes", J. David, Plenary talk, 24th Regional Conference on Solid State Science and Technology, RCSSST’08, Port Dickson, Malaysia, 2008.
5.“InGaAs Communication Photodiodes: From Low to High Power Level Designs”, M. Achouche, Invited paper, SPIE Photonics West, January 25-29 (2009), San-Jose, US (Proc. Vol.7222 72221D-1 to 72221D-7).
6."A 10 Gb/s Burst-Mode Receiver with Automatic Reset Generation and Burst Detection for Extended Reach PONs", P. Ossieur, T. De Ridder, J. Bauwelinck, C. Mélange, B. Baekelandt, X. Z. Qiu, J. Vandewege, G. Talli, C. Antony, P. Townsend and C. Ford, Optical Fibre Communication Conference (OFC), San Diego, 2009, pp. OWH3.
7.“Research and development of wireline and wireless physical layer components and subsystem”, J. Bauwelinck, C. Mélange, X. Yin, B. Baekelandt, T. De Ridder, X. Z. Qiu, J. Vandewege, accepted by European workshop on photonic solutions for wireless, access, and in-house networks, Duisburg, May 2009.
8.“Bulk lattice-matched InGaAsN for optoelectronic devices”, J. David, Invited paper, Telekom Malaysia R&D Malaysia, May. 2009.
9.“180 GHz Gain-Bandwidth product back-side illuminated GaInAs-AlInAs APDs”, A. Rouvié, D. Carpentier, J. Décobert, N. Lagay, F. Pommereau, M. Achouche, IEEE Photonics Technology Letters, Vol. 21, N0. 11, 2009, pp. 712-714.
10."Very Low Dark Current AlInAs/GaInAs SAGM Avalanche Photodiodes for 10Gb/s applications", M. Lahrichi, E. Derouin, D. Carpentier, N. Lagay, J. Decobert, G. Glastre and M. Achouche, European Conference on Optical Communication (ECOC), Vienna, 2009, pp. 09.2.2.
11."Evolution of Burst Mode Receivers", X.Z. Qiu, C. Mélange, T. De Ridder, B. Baekelandt, J. Bauwelinck, X. Yin, and J. Vandewege, Invited paper, European Conference on Optical Communication (ECOC), Vienna, 2009, pp. 07.5.1.
12."Dark current mechanisms in InxGa1-xAs1-yNy", L. J. J. Tan, W. M. Soong, S. L. Tan, Y. L. Goh, M. J. Steer, J. S. Ng and J. P. R. David, IEEE Photonics society, Belek-Antalya, Turkey, 2009, pp.233-234.
13."InGaAs High Speed Communication Photodiodes", M. Achouche, G. Glastre, C. Caillaud, M. Lahrichi and D. Carpentier, IEEE Photonics society, Belek-Antalya, Turkey, 2009, pp.361-362.
14.“Effects of annealing on the background doping and photocurrent of MBE-grown bulk InGaAsN p-i-n photodiodes”, S. L. Tan, L. J. J. Tan, Y. L. Goh, S. Y. Zhang, J. S. Ng, J. P. R. David, I. P. Marko, J. Allam, S. J. Sweeney and A. R. Adams, Proceedings for 4th Annual Institute of Physics meeting on UK Compound Semiconductors, Sheffield, July 2009.
15.“Effect of incorporating Sb into InGaAsN material system”, L. J. J. Tan, S. L. Tan, Y. L. Goh, S. Zhang, J. S. Ng, J. P. R. David, I. P. Marko, J. Allam, S. J. Sweeney and A. R. Adams, Proceedings for 4th Annual Institute of Physics meeting on UK Compound Semiconductors, Sheffield, July 2009.
16.“Fully DC-Coupled 10Gb/s Burst-Mode PON Prototypes and Upstream Experiments with 58ns Overhead”, Cedric Mélange, Xin Yin, Bart Baekelandt, Tine De Ridder, Xing-Zhi Qiu, Johan Bauwelinck, Jan Gillis, Pieter Demuytere, and Jan Vandewege, Optical Fibre Communication Conference (OFC), San Diego, 2010, pp. OWX2.
17.“Reduction of dark current and unintentional background doping in InGaAsN photodetectors by ex situ annealing”, S. L. Tan, L. J. J. Tan, Y. L. Goh, S. Y. Zhang, J. S. Ng, J. P. R. David, I. P. Marko, J. Allam, S. J. Sweeney and A. R. Adams, Proceedings of SPIE Photonics Europe, Brussels, April 2010, Proc. Vol. 7726-59.
18.“InGaAsN absorber in APDs for 1.3mm wavelength applications”, J. S. Ng, S. L. Tan, Y. L. Goh, S. Zhang,, C. H. Tan, J. P. R. David, I. P. Marko, J. P. Allam, S. J. Sweeney and A. R. Adams, Proceedings for the 22nd International Conference on Indium Phosphide and Related Materials (IPRM), Takamatsu, Kagawa, May 2010.
19.“GaInNAs for photodiodes”, J. S. Ng, C. H. Tan, J. R. David, and A. R. Adams, (Invited) Proceedings for European Materials Research Society (EMRS) Spring Meeting, Strasbourg, June 2010.
20.“Dark current mechanism in bulk GaInNAs lattice matched to GaAs”, Lionel J. J. Tan, W. M. Soong, J. P. R. David, J. S. Ng, submitted for publication in the J. of Appl., Phys., 2010.
21.“Overview of lifetest means and procedures on optoelectronic devices”, L.S. HOW, G. Pedroza, S. Lhuillier, A. Delbergue & F. Rosala, Proceedings 2nd International Symposium on Reliability of Optoelectronics for Space (ISROS), April 28-30, 2010
22.AdvEOTec Newsletter announces new testing capabilities of avalanche photodiodes thanks to MARISE project. Link : www.adveotec.com/news/news1004.htm
23.“InGaAs Communication Photodiodes: From Low- to High-Power-Level Designs”, M. Achouche, G. Glastre, C. Caillaud, M. Lahrichi, M. Chtioui, and D. Carpentier, IEEE Photonics Journal, Vol. 2, N0. 3, 2010, pp. 460-468.
24.“240-GHz Gain-Bandwidth Product Back-Side Illuminated AlInAs Avalanche Photodiodes ”, M. Lahrichi, G. Glastre, E. Derouin, D. Carpentier, N. Lagay, J. Decobert and M. Achouche, accepted for publication in IEEE Photonics Technology Letters.
Patents:
25.“Circuit for end of burst detection”, Cedric Melange, Johan Bauwelinck, Xing-Zhi Qiu and Jan Vandewege, filed as EP 10157244, 22 March 2010.
“Device and Method for Signal Detection in a TDMA Network”, Johan Bauwelinck, Tine De Ridder, Cedric Mélange, Peter Ossieur, Bart Baekelandt, Xing-Zhi Qiu, Jan Vandewege, International published number WO 2009 065861 A2, 28 May 2009; and US Application Serial Number 12/680,011, Case No.: 07-1159-WO-US, March 25, 2010.
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